| No. |
Part Name |
Description |
Manufacturer |
| 91 |
LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR |
Diodes |
| 92 |
MN2020 |
Digitally Controlled Programmable-Gain Amplifier |
etc |
| 93 |
MN2020 |
Digitally controlled programmable-gain amplifier |
Integrated Circuit Systems |
| 94 |
MN2020H |
Digitally controlled programmable-gain amplifier |
Integrated Circuit Systems |
| 95 |
MN2020H_B |
Digitally controlled programmable-gain amplifier |
Integrated Circuit Systems |
| 96 |
MN2020H_BCH |
Digitally controlled programmable-gain amplifier |
Integrated Circuit Systems |
| 97 |
PMN20EN |
30 V, 6.7 A N-channel Trench MOSFET |
NXP Semiconductors |
| 98 |
PMN20ENA |
40 V, N-channel Trench MOSFET |
Nexperia |
| 99 |
UMN20N |
Switching Diode |
ROHM |
| 100 |
UMN20NFH |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 101 |
UMN20NFHTR |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 102 |
UMN20NTR |
Switching Diode |
ROHM |
| 103 |
ZXMN2088DE6 |
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 104 |
ZXMN2088DE6TA |
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY |
Diodes |
| 105 |
ZXMN20B28K |
200V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 106 |
ZXMN20B28KTC |
200V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| | | |
