| No. |
Part Name |
Description |
Manufacturer |
| 91 |
HYR186420G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 92 |
HYR186440G-745 |
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
Infineon |
| 93 |
IRAUDAMP19 |
Two-channel 100 W (4 Ohms) Half-bridge Class-D Audio Power Amplifier with single power supply |
International Rectifier |
| 94 |
MCCS142236-D |
18-Bit Switchable Active SCSI-2 Bus Terminator (110 ohms) With Voltage Regulator |
ON Semiconductor |
| 95 |
MCCS142237-D |
9-Bit Switchable Active SCSI-2 Bus Terminator (110 ohms) With Voltage Regulator |
ON Semiconductor |
| 96 |
MCCS142238-D |
18-Bit Switchable Active SCSI-2 Bus Terminator (110 ohms) With Voltage Regulator and Inverted Disconnect |
ON Semiconductor |
| 97 |
NTE5515 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 20A. |
NTE Electronics |
| 98 |
NTE5518 |
Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A. |
NTE Electronics |
| 99 |
NTE5521 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 50V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 100 |
NTE5522 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 100V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 101 |
NTE5523 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 150V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 102 |
NTE5524 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 200V. RMS forard current It(rms) = 35A. |
NTE Electronics |
| 103 |
NTE5525 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 250V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 104 |
NTE5526 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 300V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 105 |
NTE5527 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 400V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 106 |
NTE5528 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 500V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 107 |
NTE5529 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 108 |
NTE5530 |
Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A. |
NTE Electronics |
| 109 |
NTE5582 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A. |
NTE Electronics |
| 110 |
NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. |
NTE Electronics |
| 111 |
Q62702-F1298 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 112 |
Q62702-F1378 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 113 |
Q62702-F1504 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 114 |
Q62702-F1531 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 115 |
Q62702-F1575 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 116 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 117 |
STEVAL-MKI126V2 |
MEMS microphone evaluation board based on STA321MPL and MP34DB01 (microphone processor + digital uPhone MEMS) |
ST Microelectronics |
| 118 |
T500 |
Phase Control SCR (40-80 Amperes (63-125 RMS) 1600 Volts) |
Powerex Power Semiconductors |
| 119 |
T5000740 |
Phase Control SCR (40-80 Amperes (63-125 RMS) 1600 Volts) |
Powerex Power Semiconductors |
| 120 |
T5000780 |
Phase Control SCR (40-80 Amperes (63-125 RMS) 1600 Volts) |
Powerex Power Semiconductors |
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