No. |
Part Name |
Description |
Manufacturer |
91 |
BCX71J |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
92 |
BCX71K |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
93 |
BL8531H |
12 Bit 10MSPS ADC |
Samsung Electronic |
94 |
BL8531H-ADC |
12 Bit 10MSPS ADC |
Samsung Electronic |
95 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
96 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
97 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
98 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
99 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
100 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
101 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
102 |
C9658 |
MICROCONTROLLER |
Samsung Electronic |
103 |
CL10B224 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
104 |
CL21C220 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
105 |
CM-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
106 |
CM-1829 |
P.C.B Circuit Diagram |
Samsung Electronic |
107 |
CM1419 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
108 |
CM1429 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
109 |
CM1819 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
110 |
CM1829 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
111 |
CM1829-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
112 |
CMOS DRAM |
EDO Mode, x4 and x8 Device Timing Diagram |
Samsung Electronic |
113 |
CMOS SDRAM |
CMOS SDRAM Device Operations |
Samsung Electronic |
114 |
CW5322X |
SDH104 |
Samsung Electronic |
115 |
DA22497 |
FM FRONT END |
Samsung Electronic |
116 |
DA22497D |
FM FRONT END |
Samsung Electronic |
117 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
118 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
119 |
DIRECT RDRAM |
Direct RDRAM� Device Operation |
Samsung Electronic |
120 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
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