No. |
Part Name |
Description |
Manufacturer |
91 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
92 |
2N6283 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
93 |
2N6284 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
94 |
2N6285 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
95 |
2N6286 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
96 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
97 |
2N6430 |
Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
98 |
2N6463 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
99 |
2N6464 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
100 |
2N6497 |
Trans GP BJT NPN 250V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
101 |
2N6510 |
Trans GP BJT NPN 200V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
102 |
2N6511 |
Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
103 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
104 |
2N6688 |
Trans GP BJT NPN 200V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
105 |
2N834 |
Trans GP BJT NPN 25V 3-Pin TO-18 Box |
New Jersey Semiconductor |
106 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
107 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
108 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
109 |
2SC1324 |
Trans GP BJT NPN 25V 0.15A 3-Pin Case T-8 |
New Jersey Semiconductor |
110 |
2SC1470 |
Trans GP BJT NPN 200V 0.07A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
111 |
2SC1471 |
Trans GP BJT NPN 200V 0.07A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
112 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
113 |
2SC2642 |
Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1A |
New Jersey Semiconductor |
114 |
2SC2767 |
Trans GP BJT NPN 200V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
115 |
2SC2768 |
Trans GP BJT NPN 200V 6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
116 |
2SC2769 |
Trans GP BJT NPN 200V 10A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
117 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
118 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
119 |
2SC4448 |
Trans GP BJT NPN 250V 0.15A 3-Pin(3+Tab) TO-220NIS |
New Jersey Semiconductor |
120 |
2SC5200 |
Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube |
New Jersey Semiconductor |
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