No. |
Part Name |
Description |
Manufacturer |
91 |
2N6314 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
92 |
2N6315 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
93 |
2N6316 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
94 |
2N6317 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
95 |
2N6318 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
96 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
97 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
98 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
99 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
100 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
101 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
102 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
103 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
104 |
2SB679 |
Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 |
TOSHIBA |
105 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
106 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
107 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
108 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
109 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
110 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
111 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
112 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
113 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
114 |
2SD2114S |
20V,0.5A high-current gain medium power transistor |
ROHM |
115 |
2SD2144 |
High-current Gain MediumPower Transistor (20V/ 0.5A) |
ROHM |
116 |
2SD688 |
Silicon NPN epitaxial darlington medium power, low frequency transistor |
TOSHIBA |
117 |
2SD882 |
NPN medium power transistor |
ST Microelectronics |
118 |
2SD882 |
NPN medium power low vow voltage transistor |
Unisonic Technologies |
119 |
AC127 |
Germanium N-P-N medium power transistor |
Mullard |
120 |
AC176 |
Germanium N-P-N medium power transistor |
Mullard |
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