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Datasheets for N MED

Datasheets found :: 577
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N6314 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
92 2N6315 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
93 2N6316 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
94 2N6317 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
95 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
96 2N696 Silicon n-p-n medium power transistor Mullard
97 2N697 Silicon n-p-n medium power transistor Mullard
98 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
99 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
100 2SA537AH Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
101 2SA537H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications Hitachi Semiconductor
102 2SA548H Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier Hitachi Semiconductor
103 2SB678 Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor TOSHIBA
104 2SB679 Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 TOSHIBA
105 2SC282H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
106 2SC284H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
107 2SC708AH Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching Hitachi Semiconductor
108 2SC708H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching Hitachi Semiconductor
109 2SC830H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching Hitachi Semiconductor
110 2SC89H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
111 2SC90H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
112 2SC91H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
113 2SC984H Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier Hitachi Semiconductor
114 2SD2114S 20V,0.5A high-current gain medium power transistor ROHM
115 2SD2144 High-current Gain MediumPower Transistor (20V/ 0.5A) ROHM
116 2SD688 Silicon NPN epitaxial darlington medium power, low frequency transistor TOSHIBA
117 2SD882 NPN medium power transistor ST Microelectronics
118 2SD882 NPN medium power low vow voltage transistor Unisonic Technologies
119 AC127 Germanium N-P-N medium power transistor Mullard
120 AC176 Germanium N-P-N medium power transistor Mullard


Datasheets found :: 577
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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