No. |
Part Name |
Description |
Manufacturer |
91 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
92 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
93 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
94 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
95 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
96 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
97 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
98 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
99 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
100 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
101 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
102 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
103 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
104 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
105 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
106 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
107 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
108 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
109 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
110 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
111 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
112 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
113 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
114 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
115 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
116 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
117 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
118 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
119 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
120 |
G8198 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
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