| No. |
Part Name |
Description |
Manufacturer |
| 91 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
| 92 |
10SI4 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 93 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 94 |
10SI4R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 95 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
| 96 |
10SI5 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 97 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 98 |
10SI5R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 99 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 100 |
10SI6 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 101 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 102 |
10SI6R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 103 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 104 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 105 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 106 |
10SI8 |
Silicon rectifier diode |
IPRS Baneasa |
| 107 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 108 |
10SI8R |
Silicon rectifier diode |
IPRS Baneasa |
| 109 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 110 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 111 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 112 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 113 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 114 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 115 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 116 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 117 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 118 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 119 |
12GC11 |
Silicon diffused junction rectifier 400V 12A |
TOSHIBA |
| 120 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
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