| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BF996S |
N-channel dual-gate MOS-FET |
Philips |
| 92 |
BF997 |
N-channel dual-gate MOS-FET |
Philips |
| 93 |
BF998 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 94 |
BF998 |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 95 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 96 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 97 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 98 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 99 |
CF739 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 100 |
MFE3006 |
N-channel dual-gate silicon-nitride passivated MOS field-effect transistor, depletion mode (Type B) |
Motorola |
| 101 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 102 |
MRF966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 103 |
MRFC966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 104 |
Q62702-F1215 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 105 |
SGM2013 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 106 |
SGM2013N |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 107 |
SGM2016 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 108 |
SGM2016AM |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 109 |
SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 110 |
SGM2016AN |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 111 |
SGM2016AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 112 |
SGM2016M |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 113 |
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 114 |
SGM2016P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| | | |
