No. |
Part Name |
Description |
Manufacturer |
91 |
ON1120 |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
92 |
PRN112 |
DUAL THEVENIN TERMINATION NETWORK |
California Micro Devices Corp |
93 |
PRN112221_133G |
Dual termination network |
California Micro Devices Corp |
94 |
R5421N112C |
Li-lon BATTERY PROTECTOR |
Ricoh |
95 |
R5421N112C-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
96 |
R5422N112C |
Li-lon BATTERY PROTECTOR |
Ricoh |
97 |
R5422N112C-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
98 |
R5422N112E |
Li-lon BATTERY PROTECTOR |
Ricoh |
99 |
R5422N112E-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
100 |
RN1120 |
Rectifier Diodes |
ST Microelectronics |
101 |
TXN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
SGS Thomson Microelectronics |
102 |
TXN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
ST Microelectronics |
103 |
TYN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
SGS Thomson Microelectronics |
104 |
TYN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
ST Microelectronics |
105 |
UN1121 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
106 |
UN1122 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
107 |
UN1123 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
108 |
UN1124 |
Composite Device - Transistors with built-in Resistor |
Panasonic |
109 |
UN112X |
Composite Device - Transistors with built-in Resistor |
Panasonic |
110 |
UN112Y |
Composite Device - Transistors with built-in Resistor |
Panasonic |
111 |
VN1120N1 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
112 |
VN1120N2 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
113 |
VN1120N5 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
114 |
VN1120ND |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
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