| No. |
Part Name |
Description |
Manufacturer |
| 91 |
RN1707JE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 92 |
RN1708 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 93 |
RN1708JE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 94 |
RN1709 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 95 |
RN1709JE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 96 |
STFW3N170 |
N-channel 1700 V, 8 Ohm typ., 2.3 A, PowerMESH(TM) Power MOSFET in TO-3PF package |
ST Microelectronics |
| 97 |
STW3N170 |
N-channel 1700 V, 8 Ohm typ., 2.3 A, PowerMESH(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 98 |
TC51-N1702ECBTR |
1uA voltage detector with output delay, 1.7V |
Microchip |
| 99 |
TC54VN1701ECBTR |
Voltage detector, Nch output, 1.7V, +/-1% |
Microchip |
| 100 |
TC54VN1701ECTTR |
Voltage detector, Nch open drain, 1.7V, +/-1% |
Microchip |
| 101 |
TC54VN1701EMBTR |
Voltage detector, Nch open drain, 1.7V, +/-1% |
Microchip |
| 102 |
X3N170 |
25 V, N-Channel enhancement mode MOSFET switch |
Calogic |
| 103 |
X3N170-71 |
N-Channel Enhancement Mode MOSFET Switch |
Calogic |
| | | |
