| No. |
Part Name |
Description |
Manufacturer |
| 91 |
R1121N201A-TR |
Low noise 150mA LDO regulator. Output voltage 2.0V. Active L type. Standard taping specification TR. |
Ricoh |
| 92 |
R1121N201B-TL |
Low noise 150mA LDO regulator. Output voltage 2.0V. Active H type. Taping specification TL. |
Ricoh |
| 93 |
R1121N201B-TR |
Low noise 150mA LDO regulator. Output voltage 2.0V. Active H type. Standard taping specification TR. |
Ricoh |
| 94 |
R1122N201A |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 95 |
R1122N201A-TL |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 96 |
R1122N201A-TR |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 97 |
R1122N201B |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 98 |
R1122N201B-TL |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 99 |
R1122N201B-TR |
LOW NOISE 150mA LDO REGULATOR |
Ricoh |
| 100 |
R3111N201A-TR |
Low voltage detector. Detector threshold (-Vdet) 2.0V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
| 101 |
R3111N201C-TR |
Low voltage detector. Detector threshold (-Vdet) 2.0V. Output type: CMOS. Standard taping specification TR |
Ricoh |
| 102 |
R5322N201A-TR |
120mA 2ch-LDO regulator. Output voltage 2.0V. Mask option A version; without auto discharge function at OFF state. Standardt taping specification TR. |
Ricoh |
| 103 |
R5322N201B-TR |
120mA 2ch-LDO regulator. Output voltage 2.0V. Mask option B version; with auto discharge function at OFF state. Standardt taping specification TR. |
Ricoh |
| 104 |
R5440N201A |
Ni-Cd/Ni-MH Batteries Charger Protector Ics |
Ricoh |
| 105 |
R5440N201A-TR |
Ni-Cd/Ni-MH Batteries Charger Protector Ics |
Ricoh |
| 106 |
RN2010 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 107 |
RN2011 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 108 |
TLN201 |
INFRARED LED GaAlAs INFRARED EMITTER |
TOSHIBA |
| 109 |
TN2010T |
Enhancement-Mode MOSFET Transistors |
Vishay |
| 110 |
TPN2010FNH |
Power MOSFET (N-ch 150V<VDSS≤250V) |
TOSHIBA |
| 111 |
VN2010L |
Enhancement-Mode MOSFET Transistors |
Vishay |
| 112 |
ZXTN2010A |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 113 |
ZXTN2010ASTZ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 114 |
ZXTN2010G |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 115 |
ZXTN2010GTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 116 |
ZXTN2010Z |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 117 |
ZXTN2010ZTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 118 |
ZXTN2011G |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 119 |
ZXTN2011GTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 120 |
ZXTN2011Z |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| | | |
