| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5088 |
Silicon NPN Transistor |
Motorola |
| 92 |
2N5088 |
NPN Transistor - Low level AMPS |
National Semiconductor |
| 93 |
2N5088 |
Trans GP BJT NPN 30V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 94 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 95 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 96 |
2N5088 |
NPN general purpose transistor |
Philips |
| 97 |
2N5088 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 98 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 99 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 100 |
2N5088BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 101 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 102 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 103 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 104 |
2N5088TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 105 |
2N5088TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 106 |
2N5088TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 107 |
2N5088TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 108 |
2N5088_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 109 |
2N5088_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 110 |
2N5089 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 111 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 112 |
2N5089 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 113 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 114 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 115 |
2N5089 |
Silicon NPN Transistor |
Motorola |
| 116 |
2N5089 |
NPN Transistor - Low level AMPS |
National Semiconductor |
| 117 |
2N5089 |
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 118 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 119 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 120 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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