| No. |
Part Name |
Description |
Manufacturer |
| 91 |
DRV2603RUNR |
Haptic Driver with Auto Resonance Tracking for LRA and Optimized Drive for ERM 10-QFN -40 to 85 |
Texas Instruments |
| 92 |
DRV2603RUNT |
Haptic Driver with Auto Resonance Tracking for LRA and Optimized Drive for ERM 10-QFN -40 to 85 |
Texas Instruments |
| 93 |
DV2004ES1 |
CHARGE MANAGEMENT WITH INTEGRATED PWM, PEAK VOLTAGE DETECTION & MAINTENANCE |
Texas Instruments |
| 94 |
DV2004L1 |
CHARGE MANAGEMENT WITH INTEGRATED PWM, PEAK VOLTAGE DETECTION & MAINTENANCE |
Texas Instruments |
| 95 |
DV2004S1 |
CHARGE MANAGEMENT WITH INTEGRATED PWM, PEAK VOLTAGE DETECTION & MAINTENANCE |
Texas Instruments |
| 96 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 97 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 98 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 99 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 100 |
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications |
TOSHIBA |
| 101 |
GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 102 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 103 |
IR2157 |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-pin DIP package |
International Rectifier |
| 104 |
IR21571 |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime, Automatic Restart for Lamp Exchange in a 16-pin DIP package |
International Rectifier |
| 105 |
IR21571S |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime, Automatic Restart for Lamp Exchange in a 16-lead SOIC Narrow p |
International Rectifier |
| 106 |
IR21571STR |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime, Automatic Restart for Lamp Exchange in a 16-lead SOIC Narrow p |
International Rectifier |
| 107 |
IR2157S |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow package |
International Rectifier |
| 108 |
IR2157STR |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow package |
International Rectifier |
| 109 |
LA7323 |
Single-Chip HQ Luminance Signal Processor |
SANYO |
| 110 |
LA7323M |
Single-Chip HQ Luminance Signal Processor |
SANYO |
| 111 |
LA7642N |
SECAM Format Color TV Chrominance Circuit |
SANYO |
| 112 |
MB3873 |
Multi-Resonance AC/DC Converter IC |
Fujitsu Microelectronics |
| 113 |
MB3873PF |
Multi-Resonance AC/DC Converter IC |
Fujitsu Microelectronics |
| 114 |
MM57123 |
Business/financial calculator circuit |
National Semiconductor |
| 115 |
MM5762 |
Financial calculator |
National Semiconductor |
| 116 |
MR2900 |
Provision for Standby mode operation Partial Resonance Power Supply IC Module |
Shindengen |
| 117 |
MR2920 |
(MR2900 Series) Input Voltage Autosensing / Partial Resonance Power Supply IC Module |
Shindengen |
| 118 |
MR2940 |
Provision for Standby mode operation Partial Resonance Power Supply IC Module |
Shindengen |
| 119 |
MRF21030D |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
Motorola |
| 120 |
MRF21030D |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
Motorola |
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