No. |
Part Name |
Description |
Manufacturer |
91 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
92 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
93 |
NMC27C256BQ15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
94 |
NMC27C256BQ150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
95 |
NMC27C256BQ20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
96 |
NMC27C256BQ200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
97 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
98 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
99 |
NMC27C256BQE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
100 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
101 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
102 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
103 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
104 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
105 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
106 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
107 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
108 |
NMC27C256Q300 |
300 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
109 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
110 |
NMC27C256QE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
111 |
NMC27C256QM250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
112 |
NMC27C256QM350 |
350 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
113 |
NMC27C32B |
32,768-Bit (4096 x 8) CMOS PROM |
National Semiconductor |
114 |
NMC27C32BQ |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
115 |
NMC27C32BQ150 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
116 |
NMC27C32BQ150 |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
117 |
NMC27C32BQ200 |
Memory configuration 4Kx8 Memory type EPROM Tolerance Vcc + 10 % Tolerance Vcc - 10 % |
Fairchild Semiconductor |
118 |
NMC27C32BQ200 |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
119 |
NMC27C32BQ250 |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
120 |
NMC27C32BQE200 |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
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