No. |
Part Name |
Description |
Manufacturer |
91 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
92 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
93 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
94 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
95 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
96 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
97 |
2N5190 |
NPN Epitaxial Power Transistor |
National Semiconductor |
98 |
2N5191 |
NPN Epitaxial Power Transistor |
National Semiconductor |
99 |
2N5209 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
100 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
101 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
102 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
103 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
104 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
105 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
106 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
107 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
108 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
109 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
110 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
111 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
112 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
113 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
114 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
115 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
116 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
117 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
118 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
119 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
120 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
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