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Datasheets for NS F

Datasheets found :: 552
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No. Part Name Description Manufacturer
91 FOA4400 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications Infineon
92 FOA51001B1 Semiconductor Solutions for High Speed Communi cation and Fiber OpticApplications Infineon
93 FOA5400 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications Infineon
94 FOA5401 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications Infineon
95 FOA9400 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications Infineon
96 GD175 Germanium PNP power transistor for 48V switch applications for low-frequency power amplifiers RFT
97 GT15J321 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
98 GT20J321 Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
99 GT30J121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
100 GT30J324 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
101 GT50J121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
102 GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA
103 HN4C05JU Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications TOSHIBA
104 HYB3116400BJ-50 4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM Infineon
105 HYB3116400BJ-60 4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM Infineon
106 HYB3117400BJ-50 4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM Infineon
107 HYB3117400BJ-60 4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM Infineon
108 HYB3117800BSJ-50 2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM Infineon
109 HYB3117800BSJ-60 2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM Infineon
110 HYB3118160BSJ-50 1M x 16 Bit 1k 3.3 V 50 ns FPM DRAM Infineon
111 HYB3118160BSJ-60 1M x 16 Bit 1k 3.3 V 60 ns FPM DRAM Infineon
112 HYB5116400BJ-50 4M x 4 Bit 4k 5 V 50 ns FPM DRAM Infineon
113 HYB5116400BJ-60 4M x 4 Bit 4k 5 V 60 ns FPM DRAM Infineon
114 HYB5117400BJ-50 4M x 4 Bit 2k 5 V 50 ns FPM DRAM Infineon
115 HYB5117400BJ-60 4M x 4 Bit 2k 5 V 60 ns FPM DRAM Infineon
116 HYB5117800BSJ-50 2M x 8 Bit 2k 5 V 50 ns FPM DRAM Infineon
117 HYB5117800BSJ-60 2M x 8 Bit 2k 5 V 60 ns FPM DRAM Infineon
118 HYB5118160BSJ-50 1M x 16 Bit 5 V 50 ns FPM DRAM Infineon
119 HYB5118160BSJ-60 1M x 16 Bit 5 V 60 ns FPM DRAM Infineon
120 IR3086 XPHASE Phase IC with OVP with fault overtemp detect. The IR3086 Phase IC combined with an IR XPhase TM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. International Rectifier


Datasheets found :: 552
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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