No. |
Part Name |
Description |
Manufacturer |
91 |
FOA4400 |
Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications |
Infineon |
92 |
FOA51001B1 |
Semiconductor Solutions for High Speed Communi cation and Fiber OpticApplications |
Infineon |
93 |
FOA5400 |
Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications |
Infineon |
94 |
FOA5401 |
Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications |
Infineon |
95 |
FOA9400 |
Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications |
Infineon |
96 |
GD175 |
Germanium PNP power transistor for 48V switch applications for low-frequency power amplifiers |
RFT |
97 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
98 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
99 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
100 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
101 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
102 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
103 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
104 |
HYB3116400BJ-50 |
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM |
Infineon |
105 |
HYB3116400BJ-60 |
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM |
Infineon |
106 |
HYB3117400BJ-50 |
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM |
Infineon |
107 |
HYB3117400BJ-60 |
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM |
Infineon |
108 |
HYB3117800BSJ-50 |
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM |
Infineon |
109 |
HYB3117800BSJ-60 |
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM |
Infineon |
110 |
HYB3118160BSJ-50 |
1M x 16 Bit 1k 3.3 V 50 ns FPM DRAM |
Infineon |
111 |
HYB3118160BSJ-60 |
1M x 16 Bit 1k 3.3 V 60 ns FPM DRAM |
Infineon |
112 |
HYB5116400BJ-50 |
4M x 4 Bit 4k 5 V 50 ns FPM DRAM |
Infineon |
113 |
HYB5116400BJ-60 |
4M x 4 Bit 4k 5 V 60 ns FPM DRAM |
Infineon |
114 |
HYB5117400BJ-50 |
4M x 4 Bit 2k 5 V 50 ns FPM DRAM |
Infineon |
115 |
HYB5117400BJ-60 |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
116 |
HYB5117800BSJ-50 |
2M x 8 Bit 2k 5 V 50 ns FPM DRAM |
Infineon |
117 |
HYB5117800BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
118 |
HYB5118160BSJ-50 |
1M x 16 Bit 5 V 50 ns FPM DRAM |
Infineon |
119 |
HYB5118160BSJ-60 |
1M x 16 Bit 5 V 60 ns FPM DRAM |
Infineon |
120 |
IR3086 |
XPHASE Phase IC with OVP with fault overtemp detect. The IR3086 Phase IC combined with an IR XPhase TM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. |
International Rectifier |
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