| No. |
Part Name |
Description |
Manufacturer |
| 91 |
EA207 |
Green & yellow, bi-color, right angle, T-1, low profile, LED. Lens white diffused. Max.luminous intensity at 20mA 40mcd(green & yellow). Typ. forward voltage at 20mA 2.0V(green), 2.1V(yellow). |
Gilway Technical Lamp |
| 92 |
EA208 |
Red & yellow, bi-color, right angle, T-1, low profile, LED. Lens white diffused. Max.luminous intensity at 20mA 40mcd(red & yellow). Typ. forward voltage at 20mA 2.0V(red), 2.2V(yellow). |
Gilway Technical Lamp |
| 93 |
EA444GR |
Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green). |
Gilway Technical Lamp |
| 94 |
EA444GY |
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow). |
Gilway Technical Lamp |
| 95 |
EFT124 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
| 96 |
EFT125 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
| 97 |
EFT130 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 98 |
EFT131 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
| 99 |
EFT212 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 100 |
EFT213 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 101 |
EFT214 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 102 |
EFT238 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 103 |
EFT239 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 104 |
EFT240 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
| 105 |
EFT250 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
| 106 |
EFT306 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 107 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 108 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
| 109 |
EFT321 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 110 |
EFT322 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 111 |
EFT323 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 112 |
EFT351 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 113 |
EFT352 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 114 |
EFT353 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
| 115 |
FC125 |
PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance) |
SANYO |
| 116 |
HFBR-0410 |
HFBR-0410 · Evaluation Kit for DC to 5 MBd TTL Applications w/ ST Connectors for use w/ Glass FO Cables |
Agilent (Hewlett-Packard) |
| 117 |
HFBR-0501 |
HFBR-0501 · Evaluation Kit for DC to 5 MBd TTL Applications with Plastic Optical Fibers |
Agilent (Hewlett-Packard) |
| 118 |
IDT77V106 |
3.3 volt ATM PHY for 25.6 and 51.2 Mbps Applications with TC and PMD |
IDT |
| 119 |
IDT77V107 |
3.3V ATM PHY for 25.6 and 51.2 Mbps Applications with UTOPIA level 2 Interface |
IDT |
| 120 |
L3000N |
Negative battery voltage: -80V; positive battery V.: 80V; total battery V.: 140V; SLIC KIT optimized for applications with both first and secind generation COMBOS |
SGS Thomson Microelectronics |
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