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Datasheets for OGRAM

Datasheets found :: 3512
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 COP87L42RJ One-Time Programmable (OTP) Microcontroller with 32 Kbyte of Program Memory National Semiconductor
92 COP87L84RG 8-Bit One-Time Programmable (OTP) Microcontroller with 32 Kbytes of Program Memory National Semiconductor
93 COP87L88RD 8-Bit One-Time Programmable (OTP) Microcontroller with A/D Converter and 32 Kbytes of Program Memory National Semiconductor
94 COP87L88RG 8-Bit One-Time Programmable (OTP) Microcontroller with 32 Kbytes of Program Memory National Semiconductor
95 COP87L88RGN-XE 8-Bit One-Time Programmable (OTP) Microcontroller with 32 Kbytes of Program Memory National Semiconductor
96 COP87L88RGV-XE 8-Bit One-Time Programmable (OTP) Microcontroller with 32 Kbytes of Program Memory National Semiconductor
97 DM163006 This powerful 6.25 MIPS (160 nanosecond instruction execution) yet easy-to-program (only 77 single word instructions) CMOS-based ... Microchip
98 DS83C520-ECL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
99 DS83C520-ENL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
100 DS83C520-MCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
101 DS83C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
102 DS83C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
103 DS83C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
104 DS87C520-ECL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
105 DS87C520-ENL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
106 DS87C520-MCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
107 DS87C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
108 DS87C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
109 DS87C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
110 DS87C520-WCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
111 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
112 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
113 EB4 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
114 EB4 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
115 EB6 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
116 EB6 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
117 EB7 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
118 EB8 Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
119 EB8 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
120 F3851 Program Storage Unit Fairchild Semiconductor


Datasheets found :: 3512
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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