| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AD8572AR-REEL |
World's First Auto-Zero Amplifier for Amplifying Dynamic Signals (Dual) |
Analog Devices |
| 92 |
AD8572AR-REEL7 |
World's First Auto-Zero Amplifier for Amplifying Dynamic Signals (Dual) |
Analog Devices |
| 93 |
AD8572ARU-REEL |
World's First Auto-Zero Amplifier for Amplifying Dynamic Signals (Dual) |
Analog Devices |
| 94 |
AD8574 |
World's First Auto-Zero Amplifier for Amplifying Dynamic Signals (Quad) |
Analog Devices |
| 95 |
ADUM3190 |
2.5kV rms Isolated Error Amplifier |
Analog Devices |
| 96 |
ADUM4190 |
5kV rms Isolated Error Amplifier |
Analog Devices |
| 97 |
AN-3749 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 98 |
AN5720 |
B/W TV Video Detector AMplifier / IF AGC Circuit |
Matsushita Electric Works(Nais) |
| 99 |
AN5720 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 100 |
AN5722 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 101 |
AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 102 |
AT-33225-BLK |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 103 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 104 |
AV131-315 |
HIP3™ Variable Attenuator for AMPS and GSM Base Stations |
Skyworks Solutions |
| 105 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 106 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
| 107 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 108 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 109 |
BSY51 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 110 |
BSY52 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 111 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 112 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 113 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 114 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 115 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 116 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 117 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 118 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 119 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 120 |
BSY86 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| | | |
