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Datasheets for PERATION

Datasheets found :: 5969
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 1N4620-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
92 1N4621 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
93 1N4621-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
94 1N4622 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
95 1N4622-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
96 1N4623 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
97 1N4623-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
98 1N4624 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
99 1N4624-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
100 1N4625 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
101 1N4625-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
102 1N4626 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
103 1N4626-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
104 1N4627 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
105 1N4627-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
106 285D Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed Vishay
107 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
108 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
109 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
110 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
111 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
112 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
113 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
114 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
115 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
116 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
117 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
118 2SB1357 Transistor PNP (low collector saturation voltage wide safe operation area) ROHM
119 40080 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
120 40081 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State


Datasheets found :: 5969
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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