No. |
Part Name |
Description |
Manufacturer |
91 |
2PK29A |
CdS photoconductive CELL |
TOSHIBA |
92 |
2SK118 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
93 |
2SK1578 |
N-Channel Junction FET Capacitor Microphone Applications |
SANYO |
94 |
2SK208 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
95 |
2SK2219 |
Capacitor Microphone Applications |
SANYO |
96 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
97 |
2SK3321 |
N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) |
TOSHIBA |
98 |
2SK334 |
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
SANYO |
99 |
2SK377 |
Capacitor Microphone Applications |
SANYO |
100 |
2SK596 |
CAPACITOR MICROPHONE APPLICATIONS |
SANYO |
101 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
102 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
103 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
104 |
2SK596D |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
105 |
2SK596E |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
106 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
107 |
2ZC100 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
108 |
2ZC110 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
109 |
2ZC120 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
110 |
30F2 |
Silicon photodiode |
SESCOSEM |
111 |
31002A |
Telephone tone ringer. Supply voltage 30 V. |
Contek Microelectronics |
112 |
31F2 |
Silicon photodiode |
SESCOSEM |
113 |
3292 |
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES |
Hamamatsu Corporation |
114 |
32F2 |
Silicon photodiode |
SESCOSEM |
115 |
33F2 |
Silicon photodiode |
SESCOSEM |
116 |
34F2 |
Silicon photodiode |
SESCOSEM |
117 |
35F2 |
Silicon photodiode |
SESCOSEM |
118 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
119 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
120 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
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