| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N416D |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 92 |
1N416E |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 93 |
1N416G |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 94 |
1N416GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 95 |
1N5158 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 96 |
1N5159 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 97 |
1N5160 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 98 |
2-101NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 99 |
2-104NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 100 |
2-BC288 |
Pair Silicon planar NPN transistor |
SGS-ATES |
| 101 |
2-GD607 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 102 |
2-GD608 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 103 |
2-GD609 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 104 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 105 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 106 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 107 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 108 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 109 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 110 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 111 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 112 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 113 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 114 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 115 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 116 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 117 |
22SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
| 118 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 119 |
23A017 |
Trans GP BJT NPN 50V 0.8A 3-Pin Case 55BT-2 |
New Jersey Semiconductor |
| 120 |
25A1400-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
| | | |
