No. |
Part Name |
Description |
Manufacturer |
91 |
2N3420JAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
92 |
2N3420JANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
93 |
2N3420JANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
94 |
2N3420SJAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
95 |
2N3420SJANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
96 |
2N3420SJANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
97 |
2N3421 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
98 |
2N3421JAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
99 |
2N3421JANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
100 |
2N3421JANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
101 |
2N3421SJAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
102 |
2N3421SJANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
103 |
2N3421SJANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
104 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
105 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
106 |
2N3441 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
107 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
108 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
109 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
110 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
111 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
112 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
113 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
114 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
115 |
2N3766 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
116 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
117 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
118 |
2N3814SJAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
119 |
2N3814SJANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
120 |
2N3814SJANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
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