No. |
Part Name |
Description |
Manufacturer |
91 |
DM163006 |
This powerful 6.25 MIPS (160 nanosecond instruction execution) yet easy-to-program (only 77 single word instructions) CMOS-based ... |
Microchip |
92 |
DS83C520-ECL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
93 |
DS83C520-ENL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
94 |
DS83C520-MCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
95 |
DS83C520-MNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
96 |
DS83C520-QCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
97 |
DS83C520-QNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
98 |
DS87C520-ECL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
99 |
DS87C520-ENL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
100 |
DS87C520-MCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
101 |
DS87C520-MNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
102 |
DS87C520-QCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
103 |
DS87C520-QNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
104 |
DS87C520-WCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
105 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
106 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
107 |
EB4 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
108 |
EB4 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
109 |
EB6 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
110 |
EB6 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
111 |
EB7 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
112 |
EB8 |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
113 |
EB8 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
114 |
F3851 |
Program Storage Unit |
Fairchild Semiconductor |
115 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
116 |
GMS34004TK |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
117 |
GMS34004TM |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
118 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
119 |
GMS34004TW |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
120 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
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