| No. |
Part Name |
Description |
Manufacturer |
| 91 |
UT8Q512-20UPC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 92 |
UT8Q512-IPC |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 93 |
UT8Q512-UPC |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 94 |
UT8R128K32-15WPC |
128K x 32 SRAM. 15ns access time. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 95 |
UT8R256K1615TBDPC |
256K x 16 SRAM. 15ns access time. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 96 |
UT8R512K8-15UPC |
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 97 |
UT9Q512-20IPC |
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 98 |
UT9Q512-20UPC |
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 99 |
UT9Q512-IPC |
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 100 |
UT9Q512-UPC |
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
| 101 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 102 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 103 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 104 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 105 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 106 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
