| No. |
Part Name |
Description |
Manufacturer |
| 91 |
APT8065BVR |
POWER MOS V 800V 13A 0.650 Ohm |
Advanced Power Technology |
| 92 |
APT8065BVRG |
MOSFET |
Microsemi |
| 93 |
APT8065SVFRG |
FREDFETs |
Microsemi |
| 94 |
APT8065SVR |
POWER MOS V 800V 13A 0.650 Ohm |
Advanced Power Technology |
| 95 |
APT8065SVRG |
MOSFET |
Microsemi |
| 96 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
| 97 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 98 |
APT8075BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm |
Advanced Power Technology |
| 99 |
APT8075BVFR |
POWER MOS V 800V 12A 0.750 Ohm |
Advanced Power Technology |
| 100 |
APT8075BVFRG |
FREDFETs |
Microsemi |
| 101 |
APT8075BVR |
POWER MOS V 800V 12A 0.750 Ohm |
Advanced Power Technology |
| 102 |
APT8075BVRG |
MOSFET |
Microsemi |
| 103 |
APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm |
Advanced Power Technology |
| 104 |
APT80F60J |
FREDFETs |
Microsemi |
| 105 |
APT80GA60B |
IGBT w/o anti-parallel diode |
Microsemi |
| 106 |
APT80GA60LD40 |
IGBT w/ anti-parallel diode |
Microsemi |
| 107 |
APT80GA60S |
IGBT w/o anti-parallel diode |
Microsemi |
| 108 |
APT80GA90B |
IGBT w/o anti-parallel diode |
Microsemi |
| 109 |
APT80GA90LD40 |
IGBT w/ anti-parallel diode |
Microsemi |
| 110 |
APT80GA90S |
IGBT w/o anti-parallel diode |
Microsemi |
| 111 |
APT80GP60B2 |
MOSFET |
Advanced Power Technology |
| 112 |
APT80GP60B2G |
IGBT w/o anti-parallel diode |
Microsemi |
| 113 |
APT80GP60J |
MOSFET |
Advanced Power Technology |
| 114 |
APT80GP60J |
IGBT w/o anti-parallel diode |
Microsemi |
| 115 |
APT80GP60JDF3 |
MOSFET |
Advanced Power Technology |
| 116 |
APT80GP60JDQ3 |
IGBT w/ anti-parallel diode |
Microsemi |
| 117 |
APT80M60J |
MOSFET |
Microsemi |
| 118 |
APT80SM120B |
SiC MOSFET |
Microsemi |
| 119 |
APT80SM120J |
SiC MOSFET |
Microsemi |
| 120 |
APT80SM120S |
SiC MOSFET |
Microsemi |
| | | |
