No. |
Part Name |
Description |
Manufacturer |
91 |
R1140Q301D-TL |
120mA LDO regulator IC. Output voltage 3.0V. Mask option with auto discharge function at OFF state. Taping type TL. |
Ricoh |
92 |
R1140Q301D-TR |
120mA LDO regulator IC. Output voltage 3.0V. Mask option with auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
93 |
R3111Q301A-TR |
Low voltage detector. Detector threshold (-Vdet) 3.0V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
94 |
R3111Q301C-TR |
Low voltage detector. Detector threshold (-Vdet) 3.0V. Output type: CMOS. Standard taping specification TR |
Ricoh |
95 |
RBQ30NS45A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
96 |
RBQ30NS45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
97 |
RBQ30NS45AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
98 |
RBQ30NS45ATL |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
99 |
RBQ30NS65A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
100 |
RBQ30NS65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
101 |
RBQ30NS65AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
102 |
RBQ30NS65ATL |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
103 |
RBQ30T45A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
104 |
RBQ30T45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
105 |
RBQ30T65A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
106 |
RBQ30T65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
107 |
SQ3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
108 |
SQ3019F |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
109 |
V53C832LQ30 |
High performance 3.3V 256K x 32 EDO page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
110 |
V53C832LTQ30 |
High performance 3.3V 256K x 32 EDO page mode CMOS dynamic RAM |
Mosel Vitelic Corp |
111 |
VQ3001J |
Enhancement-Mode MOSFET Transistors Arrays |
Vishay |
112 |
VQ3001P |
Enhancement-Mode MOSFET Transistors Arrays |
Vishay |
113 |
XC4025E-2HQ304C |
Field programmable gate array. |
Xilinx |
114 |
XC4025E-2HQ304I |
Field programmable gate array. |
Xilinx |
115 |
XC4025E-3HQ304C |
Field programmable gate array. |
Xilinx |
116 |
XC4025E-3HQ304I |
Field programmable gate array. |
Xilinx |
117 |
XC4025E-4HQ304C |
Field programmable gate array. |
Xilinx |
118 |
XC4025E-4HQ304I |
Field programmable gate array. |
Xilinx |
119 |
XC4028EX-2HQ304C |
Field programmable gate array. |
Xilinx |
120 |
XC4028EX-3HQ304C |
Field programmable gate array. |
Xilinx |
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