Datasheets for R BIPOLAR

Datasheets found :: 554

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No.	Part Name	Description	Manufacturer
91	2SD2167	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
92	2SD2170	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
93	2SD2195	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
94	2SD2211	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
95	2SD2212	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
96	2SD2264	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
97	2SD2318	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
98	2SD2391	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
99	2SD2537	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
100	2SD2568	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
101	2SD2653	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
102	2SD2657	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
103	2SD2672	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
104	2SD2673	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
105	2SD2674	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	ROHM
106	2STA1695	High power PNP epitaxial planar bipolar transistor	ST Microelectronics
107	2STA1943	High power PNP epitaxial planar bipolar transistor	ST Microelectronics
108	2STC5242	High power NPN epitaxial planar bipolar transistor	ST Microelectronics
109	2STF2280	Transistors, Power Bipolar, Low Voltage - High Performance	ST Microelectronics
110	2STN2540	Low voltage fast-switching PNP power bipolar transistor	ST Microelectronics
111	2STW100	Transistors, Power Bipolar, Darlington	ST Microelectronics
112	2STW200	Transistors, Power Bipolar, Darlington	ST Microelectronics
113	30KW102	102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
114	30KW102A	102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
115	30KW108	108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
116	30KW108A	108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
117	30KW120	120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
118	30KW120A	120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
119	30KW132	132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
120	30KW132A	132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor

Datasheets found :: 554

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |