| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MD1131F |
NPN silicon annular dual transistor for high frequency oscillator and amplifier applications |
Motorola |
| 92 |
MPS5179 |
NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR |
Zetex Semiconductors |
| 93 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 94 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 95 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 96 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 97 |
NTE108 |
Silicon NPN Transistor High Frequency Amplifier |
NTE Electronics |
| 98 |
NTE2506 |
Silicon NPN Transistor High Frequency Video Driver |
NTE Electronics |
| 99 |
NTE2507 |
Silicon NPN Transistor High Frequency Video Output |
NTE Electronics |
| 100 |
NTE2510 |
Silicon NPNTransistor High Frequency Video Output |
NTE Electronics |
| 101 |
SBA120-18J |
Dual 180 V, 12 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 102 |
SBR100-10J |
Dual 100 V, 10 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 103 |
SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications |
Vishay |
| 104 |
TGF149-100A |
V(drm): 100V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 105 |
TGF149-200A |
V(drm): 200V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 106 |
TGF149-300A |
V(drm): 300V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 107 |
TGF149-400A |
V(drm): 400V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 108 |
TGF149-500A |
V(drm): 500V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 109 |
TGF149-600A |
V(drm): 600V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 110 |
TPS51604 |
Synchronous Buck FET driver for High Frequency CPU Core Power Applications |
Texas Instruments |
| 111 |
TPS51604DSGR |
Synchronous Buck FET driver for High Frequency CPU Core Power Applications 8-WSON -40 to 105 |
Texas Instruments |
| 112 |
TPS51604DSGT |
Synchronous Buck FET driver for High Frequency CPU Core Power Applications 8-WSON -40 to 105 |
Texas Instruments |
| 113 |
UTC2SC1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 114 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 115 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 116 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 117 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 118 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 119 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 120 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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