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Datasheets for R LO

Datasheets found :: 6201
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
92 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
93 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
94 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
95 2N3227 NPN silicon annular transistor for low-current, high-speed switching applications Motorola
96 2N3796 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
97 2N3797 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
98 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
99 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
100 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
101 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
102 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
103 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
104 2N5086 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
105 2N5087 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
106 2N5088 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
107 2N5089 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
108 2N508A PNP Germanium Milliwatt transistor designed for low noise audio and switching applications Motorola
109 2N5179 Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz SGS-ATES
110 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
111 2N6619 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application Siemens
112 2N6620 NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER Siemens
113 2N7014 MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A Siliconix
114 2N869A PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications Motorola
115 2N929 NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
116 2N929 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
117 2N929A NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
118 2N930 NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
119 2N930 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
120 2N930A NPN silicon annular transistors for low-level, low noise amplifier applications Motorola


Datasheets found :: 6201
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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