No. |
Part Name |
Description |
Manufacturer |
91 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
92 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
93 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
94 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
95 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
96 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
97 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
98 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
99 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
100 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
101 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
102 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
103 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
104 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
105 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
106 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
107 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
108 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
109 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
110 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
111 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
112 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
113 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
114 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
115 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
116 |
2N929 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
117 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
118 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
119 |
2N930 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
120 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
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