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Datasheets for R MEDIUM

Datasheets found :: 535
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N731 NPN silicon transistor medium power, audio-frequency applications in industrial service Motorola
92 2SA497 PNP transistor for medium power amplifier applications TOSHIBA
93 2SA498 PNP transistor for medium power amplifier applications TOSHIBA
94 2SA509 Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 TOSHIBA
95 2SA509G Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G TOSHIBA
96 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD
97 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD
98 2SB1116 Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. USHA India LTD
99 2SB1116A Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. USHA India LTD
100 2SC1008 Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. USHA India LTD
101 2SC1707 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
102 2SC1707A LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
103 2SC1707AH LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
104 2SC1781 HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
105 2SC1781H HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
106 2SC497 Silicon NPN epitaxial planar medium power transistor TOSHIBA
107 2SC498 Silicon NPN epitaxial planar medium power transistor TOSHIBA
108 2SC509 Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 TOSHIBA
109 2SC509G Silicon NPN epitaxial planar medium power transistor TOSHIBA
110 2SD1616A Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. USHA India LTD
111 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
112 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
113 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
114 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
115 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
116 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
117 82731-75 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
118 AM2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
119 AM3135-007 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
120 AM3135-014 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics


Datasheets found :: 535
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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