No. |
Part Name |
Description |
Manufacturer |
91 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
92 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
93 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
94 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
95 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
96 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
97 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
98 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
99 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
100 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
101 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
102 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
103 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
104 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
105 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
106 |
2SC497 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
107 |
2SC498 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
108 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
109 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
110 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
111 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
112 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
113 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
114 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
115 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
116 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
117 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
118 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
119 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
120 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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