No. |
Part Name |
Description |
Manufacturer |
91 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
92 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
93 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
94 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
95 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
96 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
97 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
98 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
99 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
100 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
101 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
102 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
103 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
104 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
105 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
106 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
107 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
108 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
109 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
110 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
111 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
112 |
1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
113 |
1SS309 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
114 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
115 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
116 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
117 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
118 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
119 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
120 |
1SS336 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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