| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 92 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 93 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 94 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 95 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 96 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 97 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 98 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 99 |
2W005G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 100 |
2W01G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 101 |
2W02G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 102 |
2W04G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 103 |
2W06G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 104 |
2W08G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 105 |
2W10G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 106 |
37C669 |
PC 98/99 COMPLIANT SUPER I/O FLOPPY DISK CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 107 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
| 108 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 109 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 110 |
37M602 |
ENHANCED SUPER I/O CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 111 |
4011 |
Quad 2-Input NOR / NAND Buffered B Series Gate |
Fairchild Semiconductor |
| 112 |
4N25 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 113 |
4N25(SHORT) |
Photocoupler GaAs Ired & Photo-Thyristor |
TOSHIBA |
| 114 |
4N25A(SHORT) |
Photocoupler GaAs IRed & Photo .Transistor |
TOSHIBA |
| 115 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 116 |
4N26(SHORT) |
Photocoupler GaAs IRed & Photo .Transistor |
TOSHIBA |
| 117 |
4N27 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 118 |
4N27(SHORT) |
Photocoupler GaAs IRed & Photo .Transistor |
TOSHIBA |
| 119 |
4N28 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 120 |
4N28(SHORT) |
Photocoupler GaAs IRed & Photo .Transistor |
TOSHIBA |
| | | |
