| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 92 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 93 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 94 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 95 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 96 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 97 |
2SA983 |
Application Note - Typical application - RF amplifier of UHF TV tuner |
NEC |
| 98 |
2SA983 |
PNP silicon transistor DISK MOLD, RF AMP, for UHF TV tuner |
NEC |
| 99 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 100 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 101 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 102 |
2SC1393 |
Transistors TV VHF TUNER RF AMPLIFIER(FORWARD AGC) |
USHA India LTD |
| 103 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 104 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 105 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 106 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 107 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 108 |
2SC2076 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 109 |
2SC2153 |
Si NPN planar. RF amplifier. |
Panasonic |
| 110 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 111 |
2SC2758 |
NPN silicon transistor for RF AMP. and UHF TV tuner |
NEC |
| 112 |
2SC2758R |
NPN silicon transistor for RF AMP. and UHF TV tuner |
NEC |
| 113 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 114 |
2SC3122 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications |
TOSHIBA |
| 115 |
2SC3374 |
VHF AMPLIFIER VHF TV TUNER RF AMPLIFIER |
Hitachi Semiconductor |
| 116 |
2SC3862 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications |
TOSHIBA |
| 117 |
2SC392 |
Silicon NPN planar transistor, VHF and UHF RF amplifier applications |
TOSHIBA |
| 118 |
2SC4039 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 119 |
2SC4179 |
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 120 |
2SC4183 |
RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
NEC |
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