| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4742A |
Voltage regulator diode. Working voltage (nom) 12 V . |
Philips |
| 92 |
1N4743A |
Voltage regulator diode. Working voltage (nom) 13 V . |
Philips |
| 93 |
1N4744A |
Voltage regulator diode. Working voltage (nom) 15 V . |
Philips |
| 94 |
1N4745A |
Voltage regulator diode. Working voltage (nom) 16 V . |
Philips |
| 95 |
1N4746A |
Voltage regulator diode. Working voltage (nom) 18 V . |
Philips |
| 96 |
1N4747A |
Voltage regulator diode. Working voltage (nom) 20 V . |
Philips |
| 97 |
1N4748A |
Voltage regulator diode. Working voltage (nom) 22 V . |
Philips |
| 98 |
1N482B |
General purpose low leakage diode. Working inverse voltage 36V. |
Fairchild Semiconductor |
| 99 |
1N484B |
General purpose low leakage diode. Working inverse voltage 130V. |
Fairchild Semiconductor |
| 100 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
| 101 |
1N659 |
General purpose low diode. Working inverse voltage 50V. |
Fairchild Semiconductor |
| 102 |
1N660 |
General purpose low diode. Working inverse voltage 100V. |
Fairchild Semiconductor |
| 103 |
1N661 |
General purpose low diode. Working inverse voltage 200V. |
Fairchild Semiconductor |
| 104 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 105 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 106 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
| 107 |
1SS241 |
Silicon Epitaxial Planar Type Diode, marking TY |
TOSHIBA |
| 108 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 109 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 110 |
1SV153A |
Silicon epitaxial planar type variable capacitance diode, marking T5 |
TOSHIBA |
| 111 |
1SV161 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 112 |
1SV186 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 113 |
1SV204 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 114 |
1SV211 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T6 |
TOSHIBA |
| 115 |
1SV212 |
Silicon Epitaxial planar type variable capacitance diode for VCO for UHF band radio, marking T8 |
TOSHIBA |
| 116 |
1SV224 |
Silicon Epitaxial planar type variable capacitance diode, marking T7 |
TOSHIBA |
| 117 |
1SV226 |
Silicon Epitaxial planar type variable capacitance diode, marking TA |
TOSHIBA |
| 118 |
1SV227 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T9 |
TOSHIBA |
| 119 |
1SV238 |
Silicon Epitaxial planar type variable capacitance diode, marking TB |
TOSHIBA |
| 120 |
1SV254 |
Silicon Epitaxial planar type variable capacitance diode for TV tuning, marking T1 |
TOSHIBA |
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