DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for S112

Datasheets found :: 184
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
91 GS112D Germanium PNP Switching Transistor RFT
92 GTJ701/74S112 Dual master-slave JK flip flop Mullard
93 HCS112D Radiation Hardened Dual JK Flip-Flop Intersil
94 HCS112DMSR Radiation Hardened Dual JK Flip-Flop Intersil
95 HCS112HMSR Radiation Hardened Dual JK Flip-Flop Intersil
96 HCS112K Radiation Hardened Dual JK Flip-Flop Intersil
97 HCS112KMSR Radiation Hardened Dual JK Flip-Flop Intersil
98 HCS112MS Radiation Hardened Dual JK Flip-Flop Intersil
99 HCTS112D Radiation Hardened Dual JK Flip-Flop Intersil
100 HCTS112DMSR Radiation Hardened Dual JK Flip-Flop Intersil
101 HCTS112HMSR Radiation Hardened Dual JK Flip-Flop Intersil
102 HCTS112K Radiation Hardened Dual JK Flip-Flop Intersil
103 HCTS112KMSR Radiation Hardened Dual JK Flip-Flop Intersil
104 HCTS112MS Radiation Hardened Dual JK Flip-Flop Intersil
105 HD74LS112 Dual J-K Negative-edge-triggered Flip-Flops Hitachi Semiconductor
106 HD74LS112 Dual J-K Flip-Flops with Preset and Clear Hitachi Semiconductor
107 KDS112 Band Switch Diode Korea Electronics (KEC)
108 KDS112E Band Switch Diode Korea Electronics (KEC)
109 KDS112V Band Switch Diode Korea Electronics (KEC)
110 KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc
111 KM416S1120DT-G/F10 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc
112 KM416S1120DT-G/F7 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc
113 KM416S1120DT-G/F8 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc
114 KM416S1120DT-G/FC 512K x 16bit x 2 Banks Synchronous DRAM LVTTL etc
115 MDE-25S112K 1100V; max peak current:20000A; metal oxide varistor. Standard S series 25mm disc MDE Semiconductor
116 MDE-34S112K 1100V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square MDE Semiconductor
117 MFS112 Fast Rectifier (100-500ns) Microsemi
118 S112S01 SIP Type SSR for Medium Power Control SHARP
119 S112S01-SERIES,-S116S01-SERIES SIP Type SSR for Medium Power Control SHARP
120 S112S02 SIR type SSR for medium power control SHARP


Datasheets found :: 184
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



© 2024 - www Datasheet Catalog com