| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 92 |
2SC5804 |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 93 |
2SC5807 |
SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 94 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 95 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 96 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 97 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 98 |
2SC5882 |
SILICON NPN EPITAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 99 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 100 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 101 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 102 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 103 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 104 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 105 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 106 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 107 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 108 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 109 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 110 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 111 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 112 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 113 |
AK130 |
TCM Integrated Transceiver |
Asahi Kasei Microsystems |
| 114 |
AK130-VS |
TCM Integrated Transceiver |
Asahi Kasei Microsystems |
| 115 |
AK130/AK131 |
TCM Integrated Transceiver |
Asahi Kasei Microsystems |
| 116 |
AK131 |
TCM Integrated Transceiver |
Asahi Kasei Microsystems |
| 117 |
AK131-VS |
TCM Integrated Transceiver |
Asahi Kasei Microsystems |
| 118 |
AK134 |
2B+D TCM Intergrated Quad Transceiver |
Asahi Kasei Microsystems |
| 119 |
AK134-VQ |
2B + D TCM Integrated Quad Transceiver |
Asahi Kasei Microsystems |
| 120 |
AK135 |
2B+D TCM Intergrated Quad Transceiver |
Asahi Kasei Microsystems |
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