| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SC2793 |
Silicon NPN Power Transistors MT-200 package |
Savantic |
| 92 |
2SC2793 |
SILICON NPN TRIPLE DIFFUSED TYPE |
TOSHIBA |
| 93 |
2SC2794 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 94 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 95 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 96 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 97 |
CSA1162GR |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 98 |
CSA1162Y |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 99 |
CSA1163 |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 700 hFE. Complementary CSC2713 |
Continental Device India Limited |
| 100 |
CSA1163G |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE. Complementary CSC2713G |
Continental Device India Limited |
| 101 |
CSA1163L |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE. Complementary CSC2713L |
Continental Device India Limited |
| 102 |
CSC2712BL |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 350 - 700 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 103 |
CSC2712GR |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 104 |
CSC2712Y |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 105 |
CSC2713 |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 700 hFE. Complementary csa1163 |
Continental Device India Limited |
| 106 |
CSC2713G |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE. |
Continental Device India Limited |
| 107 |
CSC2713L |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE. |
Continental Device India Limited |
| 108 |
CSC2786 |
0.250W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.020A Ic, 40 - 180 hFE |
Continental Device India Limited |
| 109 |
CSC2786KF |
0.250W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.020A Ic, 90 - 180 hFE |
Continental Device India Limited |
| 110 |
CSC2786LF |
0.250W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.020A Ic, 60 - 120 hFE |
Continental Device India Limited |
| 111 |
CSC2786MF |
0.250W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.020A Ic, 40 - 80 hFE |
Continental Device India Limited |
| 112 |
E208931_HSC278 |
Silicon Schottky Barrier Diode |
Hitachi Semiconductor |
| 113 |
ELJSC270JF |
Chip Inductors - Shielded Type |
Panasonic |
| 114 |
ELJSC270KF |
Chip Inductors - Shielded Type |
Panasonic |
| 115 |
HSC276 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 116 |
HSC276 |
Diodes>Switching |
Renesas |
| 117 |
HSC276A |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 118 |
HSC276A |
Diodes>Switching |
Renesas |
| 119 |
HSC277 |
High Frequency Switching |
Hitachi Semiconductor |
| 120 |
HSC277 |
Diodes>Switching |
Renesas |
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