| No. |
Part Name |
Description |
Manufacturer |
| 91 |
19RFDCS910 |
CONTACTLESS READER CHIP SET WITH ST92163MCU |
SGS Thomson Microelectronics |
| 92 |
1N5711 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 93 |
1N5711 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 94 |
1N5817 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 95 |
1N5818 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 96 |
1N5819 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 97 |
1N581X |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 98 |
1N5820 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 99 |
1N5821 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 100 |
1N5822 |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 101 |
1N582X |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 102 |
1N5908 |
TRANSIL |
SGS Thomson Microelectronics |
| 103 |
1N5908 |
TRANSIL |
SGS Thomson Microelectronics |
| 104 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 105 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 106 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 107 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 108 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 109 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 110 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 111 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 112 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 113 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 114 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 115 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 116 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 117 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 118 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 119 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 120 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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