| No. |
Part Name |
Description |
Manufacturer |
| 91 |
KSR2110 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 92 |
KSR2111 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 93 |
KSR2111 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 94 |
KSR2112 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 95 |
KSR2113 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 96 |
KSR2113 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 97 |
KSR2113MTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 98 |
KSR2114 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 99 |
SR210 |
SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V) |
MOSPEC Semiconductor |
| 100 |
SR210 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 101 |
SR210-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=2A |
Comchip Technology |
| 102 |
SR2100 |
2.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Bytes |
| 103 |
SR2100 |
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 104 |
SR2100 |
2.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 105 |
SR2100 |
SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V) |
MOSPEC Semiconductor |
| 106 |
SR2100 |
Schottky Diode |
Rectron Semiconductor |
| 107 |
SR215 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 108 |
SR2150 |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 109 |
SR2150 |
Schottky Diode |
Rectron Semiconductor |
| 110 |
SR2150-G |
Schottky Barrier Rectifiers Diodes, VRRM=150V, VR=150V, IO=2A |
Comchip Technology |
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