| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MMSF3350-D |
WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products |
ON Semiconductor |
| 92 |
NDH833N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V |
Fairchild Semiconductor |
| 93 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 94 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 95 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 96 |
NTE327 |
Silicon NPN Transistor Power Amp, Switch |
NTE Electronics |
| 97 |
NTE328 |
Silicon NPN Transistor Power Amp, Switch |
NTE Electronics |
| 98 |
NTE379 |
Silicon NPN Transistor Power Amp, High Voltage, Switch |
NTE Electronics |
| 99 |
NTE387 |
Silicon NPN Transistor Power Amp, Switch |
NTE Electronics |
| 100 |
NTE394 |
Silicon NPN Transistor Power Amp, High Voltage Switch |
NTE Electronics |
| 101 |
NTE396 |
Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397) |
NTE Electronics |
| 102 |
NTE397 |
Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396) |
NTE Electronics |
| 103 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 104 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 105 |
SFH628-2 |
6V; 50mA low input current phototransistor potically coupled isolator |
ISOCOM |
| 106 |
SFH628-3 |
6V; 50mA low input current phototransistor potically coupled isolator |
ISOCOM |
| 107 |
SFH628-4 |
6V; 50mA low input current phototransistor potically coupled isolator |
ISOCOM |
| 108 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
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