| No. |
Part Name |
Description |
Manufacturer |
| 91 |
STU65E0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 92 |
STU65E5 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 93 |
STU65G0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 94 |
STU65G4 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 95 |
STU65N3LLH5 |
N-channel 30 V, 0.0061 Ohm, 65 A, IPAK STripFET(TM) V Power MOSFET |
ST Microelectronics |
| 96 |
STU6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 97 |
STU6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK |
ST Microelectronics |
| 98 |
STU6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 99 |
STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package |
ST Microelectronics |
| 100 |
STU6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 101 |
STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 102 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 103 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 104 |
STU6NA90 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 105 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 106 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 107 |
STU6NF10 |
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET |
ST Microelectronics |
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