No. |
Part Name |
Description |
Manufacturer |
91 |
DA22497D |
FM FRONT END |
Samsung Electronic |
92 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
93 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
94 |
DIRECT RDRAM |
Direct RDRAM� Device Operation |
Samsung Electronic |
95 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
96 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
97 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
98 |
DS_K4S161622D |
1M x 16 SDRAM |
Samsung Electronic |
99 |
DS_K4S161622E |
1M x 16 SDRAM |
Samsung Electronic |
100 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
101 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
102 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
103 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
104 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
105 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
106 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
107 |
DS_K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
108 |
DS_K6X8008TBN |
CMOS SRAM |
Samsung Electronic |
109 |
DS_K6X8016C3B |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
110 |
DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM |
Samsung Electronic |
111 |
DS_K7B803625B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
112 |
DS_K7M323625M |
1Mx36 & 2Mx18 Flow-Through NtRAM |
Samsung Electronic |
113 |
DS_K7M803625B |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
114 |
DS_K7N163601A |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
115 |
DS_K7N323601M |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
116 |
DS_K7N803601B |
256Kx36 & 512Kx18-Bit Pipelined NtRAM |
Samsung Electronic |
117 |
DS_K7N803645B |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
118 |
DS_K7R323682M |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
Samsung Electronic |
119 |
DS_K9F1208U0M |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
120 |
DS_K9K1208U0A |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
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