| No. |
Part Name |
Description |
Manufacturer |
| 91 |
FQPF9N90C |
N-Channel QFET� MOSFET 900V, 8A, 1.4? |
Fairchild Semiconductor |
| 92 |
FQU2N90TU_AM002 |
N-Channel QFET� MOSFET 900V, 1.7A, 7.2? |
Fairchild Semiconductor |
| 93 |
LM3642 |
1.5A Synchronous Boost LED Flash Driver w/ High-Side Current 9-DSBGA |
Texas Instruments |
| 94 |
LM3642TLE-LT/NOPB |
1.5A Synchronous Boost LED Flash Driver w/ High-Side Current 9-DSBGA |
Texas Instruments |
| 95 |
LM3642TLE/NOPB |
1.5A Synchronous Boost LED Flash Driver w/ High-Side Current 9-DSBGA |
Texas Instruments |
| 96 |
LM3642TLX-LT/NOPB |
1.5A Synchronous Boost LED Flash Driver w/ High-Side Current 9-DSBGA |
Texas Instruments |
| 97 |
LM3642TLX/NOPB |
1.5A Synchronous Boost LED Flash Driver w/ High-Side Current 9-DSBGA |
Texas Instruments |
| 98 |
MAX6505UTP090-T |
Trip point 90, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 99 |
MAX6505UTP095-T |
Trip point 95, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 100 |
MAX6506UTP090-T |
Trip point 90, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 101 |
MAX6506UTP095-T |
Trip point 95, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 102 |
MHW916 |
16 WATT 925-960 MHz RF POWER AMPLIFIER |
Motorola |
| 103 |
MMBZ5243B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 13.0 V. Test current 9.5 mA. |
Chenyi Electronics |
| 104 |
MMBZ5243B |
Surface mount zener diode. Nominal zener voltage 13.0V, test current 9.5mA. |
Jinan Gude Electronic Device |
| 105 |
MMBZ5244B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 14.0 V. Test current 9.0 mA. |
Chenyi Electronics |
| 106 |
MMBZ5244B |
Surface mount zener diode. Nominal zener voltage 14.0V, test current 9.0mA. |
Jinan Gude Electronic Device |
| 107 |
MMSF3305 |
SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
Motorola |
| 108 |
MPE-29G |
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package |
Sanken |
| 109 |
MPT 900V/900A |
Power assemblies three phase, non controlled bridges |
IPRS Baneasa |
| 110 |
MPT 900V/950A |
Power assemblies three phase, non controlled bridges |
IPRS Baneasa |
| 111 |
MTB9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS |
Motorola |
| 112 |
MTD9N10E |
TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
Motorola |
| 113 |
MTD9N10E |
OBSOLETE - Power MOSFET 9 Amps, 100 Volts |
ON Semiconductor |
| 114 |
MTD9N10E-D |
Power MOSFET 9 Amps, 100 Volts N-Channel DPAK |
ON Semiconductor |
| 115 |
MTP9N25 |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 116 |
MTP9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 117 |
NID9N05CL |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 118 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 119 |
NID9N05CLT4G |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 120 |
NTB90N02 |
Power MOSFET 90 Amps, 24 Volts N-Channel D2Pak and TO-220 |
ON Semiconductor |
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