| No. |
Part Name |
Description |
Manufacturer |
| 91 |
FN1F4M-T1B |
Compound transistor |
NEC |
| 92 |
FN1F4N-T1B |
Compound transistor |
NEC |
| 93 |
FN1F4Z-T1B |
Compound transistor |
NEC |
| 94 |
FN1L3M-T1B |
Compound transistor |
NEC |
| 95 |
FN1L3N-T1B |
Compound transistor |
NEC |
| 96 |
FN1L3Z-T1B |
Compound transistor |
NEC |
| 97 |
FN1L4L-T1B |
Compound transistor |
NEC |
| 98 |
FN1L4M-T1B |
Compound transistor |
NEC |
| 99 |
FN1L4Z-T1B |
Compound transistor |
NEC |
| 100 |
FP1A3M-T1B |
Hybrid transistor |
NEC |
| 101 |
FP1A4A-T1B |
Hybrid transistor |
NEC |
| 102 |
FP1A4M-T1B |
Hybrid transistor |
NEC |
| 103 |
FP1F3P-T1B |
Hybrid transistor |
NEC |
| 104 |
FP1J3P-T1B |
Hybrid transistor |
NEC |
| 105 |
FP1L2Q-T1B |
Hybrid transistor |
NEC |
| 106 |
FP1L3N-T1B |
Hybrid transistor |
NEC |
| 107 |
MIP6T1BMTSCF |
AC-DC converter / Power supply IC (IPD) |
Panasonic |
| 108 |
NE02133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 109 |
NE02133-T1B |
NPN silicon high frequency transistor. |
NEC |
| 110 |
NE3210S01-T1B |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
| 111 |
NE325S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 112 |
NE33284A-T1B |
N-channel heterojunction field-effect transistor |
NEC |
| 113 |
NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 114 |
NE4210S01-T1B |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 115 |
NE425S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 116 |
NE434S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
| 117 |
NE68033-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 118 |
NE68133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 119 |
NE721S01-T1B |
GENERAL PURPOSE L TO X-BAND GaAs MESFET |
NEC |
| 120 |
NE722S01-T1B |
L to X band N-channel GaAs MESFET. |
NEC |
| | | |
