| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MBM29DL324TD80PBT |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
| 92 |
MBM29DL324TD80PFTN |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
| 93 |
MBM29DL324TD80PFTR |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
| 94 |
MP7633TD883 |
CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER |
etc |
| 95 |
MTD800 |
Integrated fast ethernet controller |
MYSON TECHNOLOGY |
| 96 |
MTD8000N |
Photo Detectors |
Marktech Optoelectronics |
| 97 |
MTD8000NW |
Photo Detectors |
Marktech Optoelectronics |
| 98 |
MTD8000P |
Photo Detectors |
Marktech Optoelectronics |
| 99 |
MTD8N06E |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
| 100 |
NTD80N02 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 101 |
NTD80N02-001 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 102 |
NTD80N02-1G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 103 |
NTD80N02-D |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 104 |
NTD80N02G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 105 |
NTD80N02T4 |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 106 |
NTD80N02T4G |
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK |
ON Semiconductor |
| 107 |
NTD85N02R |
Power Mosfet 85 A, 24 V, N-Channel DPAK |
ON Semiconductor |
| 108 |
NTD85N02R-001 |
Power Mosfet 85 A, 24 V, N-Channel DPAK |
ON Semiconductor |
| 109 |
NTD85N02RG |
Power MOSFET 85 Amps / 24 Volts N-Channel DPAK |
ON Semiconductor |
| 110 |
NTD85N02RT4 |
Power Mosfet 85 A, 24 V, N-Channel DPAK |
ON Semiconductor |
| 111 |
NTD85N02RT4G |
Power MOSFET 85 Amps / 24 Volts N-Channel DPAK |
ON Semiconductor |
| 112 |
SSTD89A |
N-Channel JFET with Built-In Self-Biased Diodes |
Vishay |
| 113 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
| 114 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
| 115 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
| 116 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
| 117 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
| 118 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
| 119 |
STD80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 120 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
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