| No. |
Part Name |
Description |
Manufacturer |
| 91 |
LY3200ALH |
MEMS motion sensor: high performance � 2000 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 92 |
LY3200ALHTR |
MEMS motion sensor: high performance � 2000 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 93 |
LY330ALH |
MEMS motion sensor: high performance � 300 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 94 |
LY330ALHTR |
MEMS motion sensor: high performance � 300 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 95 |
MM5307 |
Baud rate generator/programmable divider |
National Semiconductor |
| 96 |
MRF966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 97 |
MRF967 |
Dual gate GaAs FET N-Channel |
Motorola |
| 98 |
MRFC966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 99 |
NE25000 |
60 GHz, high performance dual-gate GaAs MESFET |
NEC |
| 100 |
NE25118 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 101 |
NE25118-T1 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 102 |
NE25137 |
GENERAL PURPOSE DUAL GATE GAAS MESFET |
NEC |
| 103 |
NE25139 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 104 |
NE25139-T1 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 105 |
NE25139T1U71 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 106 |
NE25139T1U72 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 107 |
NE25139T1U73 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 108 |
NE25139T1U74 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 109 |
NE25139U71 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 110 |
NE25139U72 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 111 |
NE25139U73 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 112 |
NE25139U74 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET |
NEC |
| 113 |
NE25337 |
General purpose dual-gate GaAs MESFET |
NEC |
| 114 |
NE25339 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 115 |
NE25339-T1 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 116 |
Q62702-F1215 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 117 |
Q62702-F1391 |
GaAs MMIC (Biased Dual Gate GaAs FET) |
Siemens |
| 118 |
SIGC04T60 |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology |
Infineon |
| 119 |
SIGC04T60G |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology |
Infineon |
| 120 |
SIGC04T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage |
Infineon |
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