No. |
Part Name |
Description |
Manufacturer |
91 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
92 |
2N3858 |
SILICON TRANSISTORS |
General Electric Solid State |
93 |
2N3858-60 |
SILICON TRANSISTORS |
General Electric Solid State |
94 |
2N3858A |
SILICON TRANSISTORS |
General Electric Solid State |
95 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
96 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
97 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
98 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
99 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
100 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
101 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
102 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
103 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
104 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
105 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
106 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
107 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
108 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
109 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
110 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
111 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
112 |
2N4036 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
113 |
2N4037 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
114 |
2N4063 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
115 |
2N4064 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
116 |
2N4101 |
5-A SILICON CONTROLLED RECTIFIERS |
General Electric Solid State |
117 |
2N4103 |
12.5A silicon controlled rectifier. Vrm(non-rep) 700V. |
General Electric Solid State |
118 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
119 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
120 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| | | |