| No. |
Part Name |
Description |
Manufacturer |
| 91 |
PB-IRFU2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 92 |
PB-IRLU2905 |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 93 |
PB-IRLU2905Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 94 |
PB-IRLU2908 |
Leaded 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 95 |
Q62702-U295 |
NPN SILICON POWER TRANSISTOR |
Siemens |
| 96 |
Q62702-U296 |
NPN SILICON POWER TRANSISTOR |
Siemens |
| 97 |
Q62702-U297 |
NPN SILICON POWER TRANSISTOR |
Siemens |
| 98 |
S-29U294A-DFE |
CMOS serial E2PROM |
Epson Company |
| 99 |
S-29U294A-FS |
CMOS serial E2PROM |
Epson Company |
| 100 |
SFRU2955 |
Advanced Power MOSFET |
Fairchild Semiconductor |
| 101 |
SFU2955 |
P-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 102 |
TU29 |
200A silicon rectifier diode |
IPRS Baneasa |
| 103 |
TU29 |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 104 |
TU29A |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 105 |
TU29B |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 106 |
TU29C |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 107 |
TU29D |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 108 |
TU29E |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 109 |
TU29F |
200A 1800V Silicon Rectifier Diode |
IPRS Baneasa |
| 110 |
TU29R |
200A silicon rectifier diode |
IPRS Baneasa |
| 111 |
U29 SMD |
Marking for NE73439 part number, 39 NEC (SOT143) package |
NEC |
| 112 |
U290 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 113 |
U2905 |
HEXFET Power MOSFET |
International Rectifier |
| 114 |
U291 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 115 |
U299A |
299 Pin Ceramic Grid Array |
National Semiconductor |
| | | |
