No. |
Part Name |
Description |
Manufacturer |
91 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
92 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
93 |
32170 |
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
94 |
3802 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
95 |
3820 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
96 |
3850 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
97 |
3886GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
98 |
38C1 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
99 |
38C2 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ |
Mitsubishi Electric Corporation |
100 |
653SEA2MXX |
Optoelectronics - WDM- DWDM |
Mitsubishi Electric Corporation |
101 |
74273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
102 |
74LS |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
103 |
74LS244 |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
104 |
74LS273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
105 |
7531 GROUP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
106 |
7531 GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
107 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
108 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
109 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
110 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
111 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
112 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
113 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
114 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
115 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
116 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
117 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
118 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
119 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
120 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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